Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > LQ821
LQ821 spec: 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 similares
- LQ821
- 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 20 Watt, silicon gate enhancement mode RF power LDMOS transistor
LQ821 PDF Download