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LR401 spec: 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LR401 similares
- LR401
- 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LR401 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 130 Watt, silicon gate enhancement mode RF power LDMOS transistor
LR401 PDF Download