LX802 similares

  • LX802
    • 30 Watt, silicon gate enhancement mode RF power LDMOS transistor
  • LX803
    • 45 Watt, silicon gate enhancement mode RF power LDMOS transistor

LX802 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 30 Watt, silicon gate enhancement mode RF power LDMOS transistor 

LX802 PDF Download