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LZ402 spec: 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 similares
- LZ402
- 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 2
Temperature : Min -65 °C | Max 150 °C
Tamanho : 39 KB
Aplicativo : 125 Watt, silicon gate enhancement mode RF power LDMOS transistor
LZ402 PDF Download