P121 spec: 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 similares

P121
- 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P121 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 35 KB

Aplicativo : 1 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor