P123 spec: 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 similares

P123
- 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P123 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : 2 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor