P124 spec: 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 similares

P124
- 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P124 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 36 KB

Aplicativo : 4 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor