P281 spec: 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 similares

P281
- 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor

P281 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem : SO-8

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : 2.5 Watt, patented gold metallized silicon gate enhancement mode RF power VDMOS transistor