Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > S8201
S8201 spec: 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 8
Temperature : Min -65 °C | Max 150 °C
Tamanho : 40 KB
Aplicativo : 4 Watt, silicon gate enhancement mode RF power VDMOS transistor
S8201 PDF Download