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SA741 spec: 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 similares
- SA741
- 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 39 KB
Aplicativo : 35 Watt, silicon gate enhancement mode RF power VDMOS transistor
SA741 PDF Download