SH702 similares

  • SH702
    • 90 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SH703
    • 130 Watt, silicon gate enhancement mode RF power VDMOS transistor

SH702 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 90 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SH702 PDF Download