SM401 similares

  • SM401
    • 135 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM401
    • 135 Watt, silicon gate enhancement mode RF power VDMOS transistor

SM401 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 135 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SM401 PDF Download