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SM706 similares

  • SM703
    • 80 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM704
    • 125 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM705
    • 150 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SM706
    • 135 Watt, silicon gate enhancement mode RF power VDMOS transistor

SM706 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 135 Watt, silicon gate enhancement mode RF power VDMOS transistor 

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