SP202 similares

  • SP201
    • "4 Watt, silicon gate enhancement mode RF power VDMOS transistor"
  • SP202
    • 8 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SP203
    • 12 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SP204
    • 15 Watt, silicon gate enhancement mode RF power VDMOS transistor

SP202 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 2 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 39 KB

Aplicativo : 8 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SP202 PDF Download