SQ202 similares

  • SQ201
    • 8 Watt, silicon gate enhancement mode RF power VDMOS transistor
  • SQ202
    • 10 Watt, silicon gate enhancement mode RF power VDMOS transistor

SQ202 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 4 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 10 Watt, silicon gate enhancement mode RF power VDMOS transistor 

SQ202 PDF Download