Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > SQ721
SQ721 spec: 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SQ721 similares
- SQ721
- 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SQ721 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 39 KB
Aplicativo : 25 Watt, silicon gate enhancement mode RF power VDMOS transistor
SQ721 PDF Download