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SR401 spec: 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 similares
- SR401
- 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 Datasheet e Spec
Fabricante : Polyfet RF
Embalagem :
Pins : 4
Temperature : Min -65 °C | Max 150 °C
Tamanho : 40 KB
Aplicativo : 300 Watt, silicon gate enhancement mode RF power VDMOS transistor
SR401 PDF Download