STH6NA80FI similares

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- Power dissipation 200 W Transistor polarity N Channel Current Id cont. 60 A Current Idm pulse 240 A Pitch lead 5.45 mm Voltage Vds max 100 V Resistance Rds on 0.025 R Temperature current 25 ?C
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STH6NA80FI
- N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS

STH6NA80FI Datasheet e Spec

Embalagem :

Pins : 0

Temperature : Min 0 °C | Max 0 °C

Tamanho : 151 KB

Aplicativo : N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS