28LV256TI-3 similares

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    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28LV64TM-3
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns.
  • 28LV256SI-3
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
  • 28LV64JM-5
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 300 ns.
  • 28LV64TI-6
    • Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns.
  • 28LV256TM-4
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
  • 28LV256SM-6
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
  • 28LV256PI-5
    • Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.

28LV256TI-3 Datasheet e Spec

Fabricante : Turbo IC 

Embalagem : TSOP 

Pins : 28 

Temperature : Min -40 °C | Max 85 °C

Tamanho : 45 KB

Aplicativo : Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. 

28LV256TI-3 PDF Download