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MJE3055T spec: NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.

MJE3055T similares

  • MJE3055T
    • NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W.

MJE3055T Datasheet e Spec

Fabricante : Usha 

Embalagem : TO-220 

Pins : 3 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 52 KB

Aplicativo : NPN, silicon plastic power transistor. Designed for general-purpose switching and amplifier application. Vceo(sus) = 60Vdc, Vcb = 70Vdc, Veb = 5Vdc, Ic = 10Adc, Pd = 75W. 

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