1N5407 spec: Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A

1N5407 similares

1N5404
- Silicon rectifier. Max recurrent peak reverse voltage 400V. Max RMS voltage 280V. Max DC blocking voltage 400V. Current 3.0A
1N5400
- Silicon rectifier. Max recurrent peak reverse voltage 50V. Max RMS voltage 35V. Max DC blocking voltage 50V. Current 3.0A
1N5408
- Silicon rectifier. Max recurrent peak reverse voltage 1000V. Max RMS voltage 700V. Max DC blocking voltage 1000V. Current 3.0A
1N5406
- Silicon rectifier. Max recurrent peak reverse voltage 600V. Max RMS voltage 420V. Max DC blocking voltage 600V. Current 3.0A
1N5401
- Silicon rectifier. Max recurrent peak reverse voltage 100V. Max RMS voltage 70V. Max DC blocking voltage 100V. Current 3.0A
1N5407
- Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A
1N5402
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1N5407 Datasheet e Spec

Fabricante : WingShing

Embalagem : DO-27

Pins : 2

Temperature : Min -65 °C | Max 175 °C

Tamanho : 305 KB

Aplicativo : Silicon rectifier. Max recurrent peak reverse voltage 800V. Max RMS voltage 560V. Max DC blocking voltage 800V. Current 3.0A