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IRFB11N50A spec: HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
IRFB11N50A similares
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IRFB11N50A Datasheet e Spec
Fabricante : IR
Embalagem :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 109 KB
Aplicativo : HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A
IRFB11N50A PDF Download