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IRFB260N spec: HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N similares
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- IRFB260N
- HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
- IRFB31N20D
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IRFB260N Datasheet e Spec
Fabricante : IR
Embalagem :
Pins : 3
Temperature : Min -55 °C | Max 175 °C
Tamanho : 98 KB
Aplicativo : HEXFET power MOSFET. VDSS = 200V, RDS(on) = 0.040 Ohm, ID = 56A
IRFB260N PDF Download