BUL52A similares

  • BUL52A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL52B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54A
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.

BUL52A Datasheet e Spec

Fabricante : Magnatec 

Embalagem : TO220 

Pins : 3 

Temperature : Min 0 °C | Max 150 °C

Tamanho : 20 KB

Aplicativo : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. 

BUL52A PDF Download