BUL54B similares

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    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL54B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
  • BUL52B
    • Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications.
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BUL54B Datasheet e Spec

Fabricante : Magnatec 

Embalagem : TO220 

Pins : 3 

Temperature : Min 0 °C | Max 150 °C

Tamanho : 19 KB

Aplicativo : Advanced distributed base design high voltage high speed NPN silicon power transistor. Designed for use in electronic ballast applications. 

BUL54B PDF Download