F1012 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1012 similares

F1012
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F1014
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F1015
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F1018
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F1012 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor