F1018 spec: Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1018 similares

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F1018 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 8

Temperature : Min -65 °C | Max 150 °C

Tamanho : 41 KB

Aplicativo : Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor