F1210 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 similares

F1210
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
F1214
- 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F1210 Datasheet e Spec

Fabricante : Polyfet RF

Embalagem :

Pins : 4

Temperature : Min -65 °C | Max 150 °C

Tamanho : 40 KB

Aplicativo : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor