Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1214
F1214 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Path:OKDatasheet > Catalog Datasheet > Polyfet RF Datasheet > F1214
F1214 spec: 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
Fabricante : Polyfet RF
Embalagem :
Pins : 6
Temperature : Min -65 °C | Max 150 °C
Tamanho : 38 KB
Aplicativo : 10 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor