okDatasheet.com

F2247 similares

  • F2246
    • 2 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2247
    • 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor
  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2247 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 6 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 36 KB

Aplicativo : 4 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

F2247 PDF Download