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F2248 similares

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  • F2247
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  • F2248
    • 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor

F2248 Datasheet e Spec

Fabricante : Polyfet RF 

Embalagem :  

Pins : 6 

Temperature : Min -65 °C | Max 150 °C

Tamanho : 38 KB

Aplicativo : 8 Watt, Patented gold metalized silicon gate enhancement mode RF power VDMOS transistor 

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