Path:OKDatasheet > Catalog Datasheet > ST Microelectronics Datasheet > IRF822
IRF822 spec: N-channel enhancement mode power MOS transistor, 500V, 2.8A
IRF822 similares
- IRF820
- N-channel enhancement mode power MOS transistor, 500V, 3.0A
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- N-CHANNEL 500V - 2.5 OHM - 2.5A - TO-220 POWERMESH MOSFET
- IRF820FI
- N-channel enhancement mode power MOS transistor, 500V, 2.2A
- IRF821
- N-channel MOSFET, 450V, 2.5A
- IRF821FI
- N-channel MOSFET, 450V, 2.0A
- IRF822
- N-channel enhancement mode power MOS transistor, 500V, 2.8A
- IRF822FI
- N-channel enhancement mode power MOS transistor, 500V, 1.9A
- IRF823
- "N-channel MOSFET, 450V, 2.2A"
IRF822 Datasheet e Spec
Fabricante : ST Microelectronics
Embalagem : TO-220
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Tamanho : 185 KB
Aplicativo : N-channel enhancement mode power MOS transistor, 500V, 2.8A
IRF822 PDF Download