Path:OKDatasheet > Catalog Datasheet > ST Microelectronics Datasheet > IRF822FI
IRF822FI spec: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Path:OKDatasheet > Catalog Datasheet > ST Microelectronics Datasheet > IRF822FI
IRF822FI spec: N-channel enhancement mode power MOS transistor, 500V, 1.9A
Fabricante : ST Microelectronics
Embalagem : ISOWATT220
Pins : 3
Temperature : Min -65 °C | Max 150 °C
Tamanho : 185 KB
Aplicativo : N-channel enhancement mode power MOS transistor, 500V, 1.9A