Path:OKDatasheet > Catalog Datasheet > WingShing Datasheet > BUT11A
BUT11A spec: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Path:OKDatasheet > Catalog Datasheet > WingShing Datasheet > BUT11A
BUT11A spec: NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
Fabricante : WingShing
Embalagem : TO-220
Pins : 3
Temperature : Min 0 °C | Max 0 °C
Tamanho : 24 KB
Aplicativo : NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.