BUT12A similares

BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 850V. Collector-emitter voltage 400V. Emitter-base voltage 9V.
BUT11A
- NPN silicon transistor. High voltage power switcing applications. Collector-base voltage 1000V. Collector-emitter voltage 450V. Emitter-base voltage 9V.
BUT11AF
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BUT12A Datasheet e Spec

Fabricante : WingShing

Embalagem : TO-220

Pins : 3

Temperature : Min 0 °C | Max 0 °C

Tamanho : 71 KB

Aplicativo : NPN silicon diffused power transistor. For switching power circuits