Path:OKDatasheet > Catalog Datasheet > IR Datasheet > IRFB9N60A
IRFB9N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Path:OKDatasheet > Catalog Datasheet > IR Datasheet > IRFB9N60A
IRFB9N60A spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A
Fabricante : IR
Embalagem :
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 148 KB
Aplicativo : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A