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IRFBC30AS spec: HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30AS similares
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IRFBC30AS Datasheet e Spec
Fabricante : IR
Embalagem : DDPak
Pins : 3
Temperature : Min -55 °C | Max 150 °C
Tamanho : 161 KB
Aplicativo : HEXFET power MOSFET. VDSS = 600V, RDS(on) = 2.2 Ohm, ID = 3.6A
IRFBC30AS PDF Download